4F Square 架构全球首产：消息称三星突破 10 纳米 DRAM 瓶颈
IT之家 4 月 25 日消息，韩媒 The Elec 昨日（4 月 24 日）发布博文， 报道称三星已成功生产出采用 4F Square 单元结构与 VCT 技术的 10a DRAM 晶圆，并在测试中确认了功能性芯片，计划于 2028 年量产。 这一突破标志着业界首次在 DRA
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